Nonvolatile memory with command-driven on-die termination

ABSTRACT

On-die termination circuitry within a non-volatile memory device applies a first termination resistance to an I/O node in response to a data storage command indicating that a data signal conveyed on a bidirectional signaling line is to be received within the non-volatile memory device via the I/O node, and applies a second termination resistance to the I/O node in response to information indicating that another memory device is to output a data signal onto the bidirectional signaling line.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/523,923, filed Oct. 26, 2014 and entitled “Buffered Memory ModuleHaving Multi-Valued On-Die Termination,” which is a continuation of U.S.patent application Ser. No. 13/952,393, filed Jul. 26, 2013 and entitled“Multi-Valued On-Die Termination,” which is a continuation of U.S.patent application Ser. No. 13/480,298, filed May 24, 2012 and entitled“Controlling On-Die Termination in a Dynamic Random Access MemoryDevice” (issued as U.S. Pat. No. 8,610,459), which is a continuation ofU.S. patent application Ser. No. 13/180,550, filed Jul. 12, 2011 andentitled “Controlling Dynamic Selection of On-Die Termination” (issuedas U.S. Pat. No. 8,188,762), which is a continuation of U.S. patentapplication Ser. No. 13/043,946, filed Mar. 9, 2011 and entitled“Integrated Circuit Device with Dynamically Selected On-Die Termination”(issued as U.S. Pat. No. 8,089,298), which is a continuation of U.S.patent application Ser. No. 12/861,771, filed Aug. 23, 2010 and entitled“A Memory Controller That Controls Termination in a Memory Device”(issued as U.S. Pat. No. 7,924,048), which is a continuation of U.S.patent application Ser. No. 12/507,794, filed Jul. 22, 2009 and entitled“Memory-Module Buffer with On-Die Termination” (issued as U.S. Pat. No.7,782,082), which is a continuation of U.S. patent application Ser. No.12/199,726, filed Aug. 27, 2008 and entitled “Controlling Memory DevicesThat Have On-Die Termination” (issued as U.S. Pat. No. 7,602,209), whichis a continuation of U.S. patent application Ser. No. 11/422,022, filedJun. 2, 2006 and entitled “Integrated Circuit with Graduated On-DieTermination” (issued as U.S. Pat. No. 7,486,104). Each of the foregoingapplications is hereby incorporated by reference.

TECHNICAL FIELD

The present invention relates to high-speed signaling systems andcomponents.

BACKGROUND

High-speed signal lines are commonly terminated by resistive loadsselected to match the characteristic impedance of the signal lines andthereby cancel undesired reflections. Historically, the terminatingelements have been implemented by discrete resistors connected to metaltraces on a mother board or other printed circuit board. More recently,particularly in the domain of high-bandwidth memory systems, on-dietermination structures have been provided, for example, on theintegrated circuit die of a memory device or memory controller.

FIG. 1 illustrates a prior-art memory system 100 that employs an on-dietermination scheme. The memory system 100 includes a memory controller101 and pair of memory modules 103A and 103B, with each memory modulecoupled in parallel to a shared data path 102 (DATA), and each memorymodule (103A, 103B) coupled to a termination control line (TC1, TC2,respectively) to enable receipt of respective termination control signalfrom the memory controller. As shown in detail view 106, each of thememory devices 105 within a given memory module 103 includes a set ofdata input/output (I/O) circuits 107 ₁-107 _(N) having a data signaltransceiver 109 (i.e., output driver and signal receiver coupled toprovide inbound data to and receive outbound data from I/O logic/memorycore circuitry 115) and a switched termination structure 111 coupled inparallel to a respective data line 117 ₁-117 _(N) of data path 112(Data[N:1]), where data lines 117 ₁-117 _(N) of data path 112constitutes a subset of the data lines within data path 102. Theswitched termination structures 111 themselves each include a respectiveload element (R) coupled to the corresponding data line via a switchelement (X), with each of the switch elements within the memory devicesof a given memory module 103 coupled to a common termination controlinput, TC, to receive an incoming termination control signal. By thisarrangement, the memory controller 101 may assert the terminationcontrol signal supplied to either of the memory modules 103 (i.e., viatermination control lines TC1 and TC2) to switchably connect the loadelements within the constituent memory devices of the memory module torespective lines of the data path 102. During write operations in whichdata is output onto the data path 102 to be received within a selectedone of the memory modules (103A or 103B), the memory controller 101asserts a termination control signal on the termination control linecoupled to the non-selected memory module, thereby terminating the datapath stub coupled to that memory module and suppressing undesiredreflections. At the same time, the memory controller 101 deasserts thetermination control signal supplied to the selected memory modulethereby isolating the data path 102 from the on-die terminations withinthe memory devices 105 of that memory module to avoid undue signalattenuation. This operation of the memory controller is shown at 120 ofFIG. 1.

Analysis shows that, unfortunately, the single-termination scheme ofFIG. 1 may yield sub-optimal signaling performance due, at least inpart, to impedance discontinuity that tends to result at the selectedmemory module when the on-die terminations within that module aredecoupled from the data path 102. On the other hand, asserting thetermination control signal at the selected memory module tends to undulyattenuate the incoming data signals, reducing signaling margin andincreasing the likelihood of signaling errors.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example, and not by wayof limitation, in the figures of the accompanying drawings and in whichlike reference numerals refer to similar elements and in which:

FIG. 1 illustrates a prior-art memory system that employs an on-dietermination scheme;

FIG. 2 illustrates an embodiment of a memory system having multiple,graduated on-die terminations per high-speed signaling line;

FIG. 3 illustrates an exemplary approach for achieving graduatedtermination within a memory system without adding additional terminationstructures within the constituent memory devices;

FIG. 4 illustrates an alternative embodiment of a memory system havinggraduated on-die terminations;

FIG. 5 illustrates another embodiment of a memory system havinggraduated on-die terminations; and

FIG. 6 illustrates an exemplary state diagram of a finite state machinethat may be applied within a memory device in combination with explicitor implicit termination control detection circuitry to effect a desiredone of multiple, graduated terminations.

DETAILED DESCRIPTION

Signaling systems having improved signaling characteristics that resultfrom multiple, graduated on-die terminations are disclosed in variousembodiments. In one embodiment, each memory device within amultiple-module memory system includes multiple on-die terminationstructures per incoming high-speed signal line to enable any of multipledifferent termination loads to be switchably coupled to the signal lineaccording to whether the memory module is a destination for incomingsignals. For example, in a particular embodiment, each memory devicewithin a two-module memory system includes two termination structuresper incoming data line, with the load elements within the twotermination structures being implemented by or programmed to havedifferent impedance values, thereby enabling selection between arelatively high-load termination and a relatively low-load terminationwithin a given memory module according to whether the memory module isthe destination for high-speed signals. Thus, during a write operation,the high-load terminations, referred to herein as hard terminations, maybe switchably connected to the high-speed signaling lines within thememory devices of the non-selected (e.g., non-addressed) memory moduleto provide transmission line load-matching, while the low-loadtermination, referred to herein as a soft termination, may be switchablyconnected to the high-speed signaling lines within the memory devices ofthe selected memory module to provide a desired level of energyabsorption (e.g. to cancel reflections) without unduly attenuating theincoming signals. In a subsequent write operation directed to thealternate memory module, the termination selections may be quicklyreversed to establish soft termination at the alternately selectedmemory module and hard termination at the non-selected memory module.

In one embodiment, multiple termination control lines are provided foreach rank of memory devices on a memory module (a rank of memory devicesbeing a set of one or more memory devices that are selected to receiveor output data as a parallel group) to enable independent selectionbetween soft and hard terminations therein. In an alternativeembodiment, a snoop logic circuit is provided within each of the memorydevices to determine whether the memory device is the target of aparticular signaling transaction and to switchably couple either thesoft terminations or the hard terminations to the data lines and/orother high-speed signal lines accordingly. In another embodiment, abuffer integrated circuit (IC) is provided to receive incoming signalswithin a memory module and to distribute the signals to one of multipleranks of memory devices on the memory module. In such an embodiment,multiple, graduated on-die termination structures per high-speedsignaling line may be provided on the buffer IC instead of, or inaddition to, the memory devices. The high-speed signal lines coupled tothe multiple, graduated on-die termination structures may include datasignal lines, address signal lines, command signal lines (any or all ofwhich may be time multiplexed and thus constitute a single set of signallines) or any combination thereof. Further, a non-volatile memory suchas a serial presence detect (SPD) memory may be programmed withinformation indicating whether the memory devices within a given memorymodule include support for graduated terminations. By this arrangement,a memory controller may read the SPD memory (or other characterizingcircuit or storage) to determine whether graduated terminations aresupported and, if so, issue termination control signals accordingly,thus enabling the memory controller to operate in either a legacytermination mode or graduated termination mode. Also, in a system havingdual-rank memory modules, the termination values for each of the tworanks on a given memory module may be programmed to have low-load andhigh-load values, thus enabling selection between hard and softterminations according to whether the module is the destination forhigh-speed signals. These and other embodiments are described in furtherdetail below.

FIG. 2 illustrates an embodiment of a memory system 150 having multiple,graduated on-die terminations per high-speed signaling line. The memorysystem 150 includes a memory controller 151 coupled to two memorymodules, 153A and 153B via a multi-drop data path 152 (i.e., the memorymodules 153A and 153B are coupled in parallel to the data path 152),though additional memory modules may be coupled to the multi-drop datapath 152 in alternative embodiments. Also, one or more additional signalpaths (not shown) for conveying command, address and timing signals maybe coupled between the memory controller 151 and memory modules 153.

Each of the memory modules 153 includes multiple integrated-circuitmemory devices 155 coupled to respective subsets of signal lines of thedata path (i.e., coupled to respective slices of the data path 152),thereby forming a memory rank. In general, the memory devices within thememory rank are accessed as a group, thus enabling transfer of N×M-bitwide read and write data words, where N is the number of data bitsconveyed to or from a given memory device in a given transaction (i.e.,the slice width), and M is the number of memory devices within thememory rank (i.e., the number of data path slices).

In contrast to the memory devices of FIG. 1, described above, each ofthe memory devices 155 within memory modules 153 includes twotermination control inputs to enable reception of two independenttermination control signals and thus provide for switched connection ofone of two graduated termination loads (i.e., termination loads havingdifferent impedance values) to each data line of the incoming dataslice. In the particular embodiment shown, termination control signalsare output from the memory controller 151 on termination control lines,TC1 and TC2, that are coupled respectively to termination controlinputs, TCa and TCb, of memory module 153A and, in reverse order, totermination control inputs TCb and TCa of memory module 153B. Withineach of the memory modules 153, the TCa and TCb termination controlinputs are coupled to corresponding TCa and TCb inputs of the individualmemory devices 155. Referring to detail view 156, each of the memorydevices 155 within a given module 153 includes a set of data I/Ocircuits 157 ₁-157 _(N) having a data transceiver structure 159 (e.g.,output driver 160 a and signal receiver 160 b coupled to provide inbounddata to and receive outbound data from I/O logic and memory core 165)and a pair of switched termination structures 161 a and 161 b allcoupled in parallel to a respective data line 167 ₁-167 _(N) of datapath 162, where data lines 167 ₁-167 _(N) of data path 162 constitute asubset of the data lines within overall data path 152. Each of theswitched termination structures 161 a, 161 b includes a respective loadelement R1, R2 coupled to the corresponding data line via acorresponding switch element X1, X2. As shown, the switch elements X1within each of the data I/O circuits 157 ₁-157 _(N) is coupled in commonto termination control input TCa and the switch elements X2 are coupledin common to termination control input TCb. By this arrangement, when atermination control signal is asserted on signal line TC1, load elementsR1 are switchably coupled to respective lines of the data path 152within module 153A, and load elements R2 are switchably coupled to therespective lines of the data path within module 153B (i.e., by virtue ofthe swapped coupling of lines TC1/TC2 to the TCa and TCb inputs of thetwo memory modules 153A and 153B). Thus, by programming (orimplementing) load elements R1 to have a relatively high load (i.e., arelatively low impedance) and load elements R2 to have a relatively lowload (i.e., a relatively high impedance) within each of the memorydevices 155, load elements R1 may be switchably coupled to the data pathto effect a hard termination and load elements R2 may be switchablycoupled to the data path to effect a soft termination. Accordingly, asshown by the controller operation at 170, during a write operationdirected to memory module 153A, the memory controller 151 may assert atermination control signal on line TC2 (and deassert the terminationcontrol signal on line TC1) to switchably couple load elements R1 to thedata path 152 within memory module 153B and to switchably couple loadelements R2 to the data path 152 within memory module 153A, thuseffecting a graduated termination within the selected and non-selectedmemory modules; that is, a soft termination in the selected memorymodule and a hard termination in the non-selected memory module (notethat a third control state may be established by deasserting bothtermination control signals, thus decoupling termination loads from thedata path 102 within both memory modules). When compared with theconventional on/off termination scheme described above in reference toFIG. 1, the multiple, graduated terminations generally yield largersignaling margins (i.e., more open data eyes), thus providing reducedbit error rate and additional headroom for increased signaling rates.

Still referring to FIG. 2, it should be noted that the terminationstructures 161 a and 161 b may alternatively be included within outputdriver 160 a, in which case the output driver 160 a may turn on a subsetof the elements used to drive the signal line (e.g., a weaker subset ofdrive elements than the full set used when actually driving a signal)and concurrently couple pull-up and/or pull-down termination elements tothe signal line at the same time to establish the termination. Also,while a single pair of termination control lines are shown in FIG. 2 anddescribed above (i.e., coupled to the termination control inputs TCa andTCb of memory module 153A and in reverse order to the terminationcontrol inputs of memory module 153B), a separate pair of terminationcontrol lines may be provided to each memory module in an alternativeembodiment.

FIG. 3 illustrates an exemplary approach for achieving graduatedtermination within a memory system 200 without adding additionaltermination structures within the constituent memory devices. As shown,the memory system 200 includes a memory controller 201 coupled to twodual-rank memory modules, 203A and 203B, via a multi-drop data path 152(though additional dual-rank memory modules 203 may be coupled to themulti-drop data path 152 in alternative embodiments and additional ranksmay be provided per memory module), but with only one terminationcontrol line provided per memory rank, instead of multiple terminationcontrol lines per memory rank as in the embodiment of FIG. 2. Becausethe two ranks (207 ₁ and 207 ₂) of memory devices 205 within a givenmemory module 203 are coupled in parallel to the data path 152, and theimpedance of the relatively short path between them (208) is relativelysmall as compared to the off-module portion of the data path 152, thetermination structures (or load elements thereof) within correspondingmemory devices 205 within the two different ranks 207 ₁ and 207 ₂ may beprogrammed to have (or implemented with) different impedance values, andthus provide for selection between graduated termination loads. Morespecifically, as shown at detail views 216 a and 216 b, each of thememory devices 205A within memory rank 207 ₁ of module 203A may beprogrammed to have a relatively high termination load, R1 (i.e., lowimpedance) and each of the memory devices 205B within memory rank 2 ofmemory module 203A may be programmed to a relatively low terminationload, R2, thus establishing a soft-terminated memory rank 207 ₁ and ahard-terminated memory rank 207 ₂ within the same memory module. Notethat this arrangement is possible even within memory devices 205 thathave a single termination structure (i.e., with switch X and terminationload coupled in parallel with signal transceiver 159 within an I/Ocircuit 211) per incoming data line 214, and that the programming ofsoft and hard termination loads (R1 and R2) within the devices of thedifferent memory ranks may be achieved through register programming(e.g., storing a value within register 221 within the I/O logic andmemory core 219), production-time configuration (e.g., fuse, anti-fuse,non-volatile storage element, etc.) or external contact strapping. Thememory devices 205 within the two memory ranks 207 ₁ and 207 ₂ of memorymodule 203B may be programmed in the same manner as shown in detailviews 216 c and 216 d. By this arrangement, instead of deassertingtermination the control signals supplied to a memory module selected toreceive write data, the termination control signal that controlsswitched coupling of the soft-terminated memory rank 207 ₂ of theselected memory module 203 may be asserted, and the termination controlsignal that controls switched coupling of the hard-terminated memoryrank 207 ₁ deasserted to establish a soft termination at the selectedmemory module 203, while the termination control signals supplied to thenon-selected memory module are oppositely asserted and deasserted (i.e.,asserting the termination control signal to engage the hard terminationat memory rank 207 ₁ and deasserting the termination control signal todisengage (decouple) the soft termination at memory rank 207 ₂) toestablish a hard termination at the non-selected memory module.Accordingly, as shown by the controller operation at 230, in a writeoperation directed to memory module 203A (memory module A), terminationcontrol signals are deasserted on termination control lines TC1 and TC4(i.e., set to logic ‘0’) and asserted on termination control lines TC2and TC3 (set to logic ‘1’) to switchably couple the R2 termination loadswithin memory rank 207 ₂ of memory module 203A to the data path 152 (andswitchably decouple the R1 termination loads within memory rank 207 ₁)to effect soft-termination for the selected memory module, andswitchably coupling the R1 termination loads within memory rank 207 ₁ ofmemory module 203B to the data path 152 to effect hard termination forthe non-selected memory module. In a write operation directed to memorymodule 203B, the signal levels on the termination control lines areinverted to establish soft termination (TC3=0, TC4=1) in the selectedmemory module 203B, and hard termination (TC1=1, TC2=0) in thenon-selected memory module 203A.

In an alternative approach to that shown in FIG. 3, hard termination maybe achieved by asserting both the termination control signals providedto a given memory module, in effect switchably coupling the loadelements within commonly coupled termination structures of the twomemory ranks 207 ₁ and 207 ₂ in parallel to establish an impedanceR1*R2/(R1+R2) which, when R1 and R2 are programmed to (or implementedwith) the same value, becomes R1/2. Thus, in such an approach, bothtermination control signals may be asserted simultaneously to effecthard termination within a non-selected module, while a singletermination control signal is asserted to effect soft termination (R1 orR2 or, if programmed with the same value, then either of them) withinthe selected memory module.

FIG. 4 illustrates an alternative embodiment of a memory system 250having graduated on-die terminations. The memory system 250 includes amemory controller 251 coupled to memory modules 253A and 253B via amulti-drop data path 152 and termination control lines TC1 and TC2generally as described in reference to FIG. 2. In contrast to FIG. 2,however, each of the memory modules 253 includes a buffer IC 261 thatoperates as an intermediary between the memory controller 251 and one ormore ranks of memory devices 263 ₁-263 _(R). More specifically, thebuffer IC 261 includes controller interface to receive signals from andoutput signals to the memory controller 251 (i.e., coupled to the datapath, termination control lines as well as other signal lines (notshown) for conveying command, address and timing signals to/from thememory controller 251), and multiple memory interfaces to transfersignals to and from respective memory ranks 263 (note that, in thisregard, the buffer IC 261 may be implemented by multiple separate ICs,each interfacing with a respective one of the memory ranks 263 or arespective subset of the memory ranks). Each of the data paths (and/orother signal paths for conveying command, address and timing signals)coupled between a memory rank 263 and a given memory interface of thebuffer IC 261 may be a point-to-point link or and may be singly ordoubly terminated (i.e., termination structures coupled to one or bothends) either on die or on the memory module 253. In one embodiment, thecontroller interface within the buffer IC 261 is implemented ingenerally the manner described for the individual memory devices withinthe embodiment of FIG. 2. That is, each buffer IC 261 includes twotermination control inputs, TCa and TCb, to enable reception of twoindependent termination control signals and thus provide for switchedconnection of one of two graduated termination loads to each high-speedsignal line of the data path 152. As in the embodiment of FIG. 2, thetermination control line connections between TC1/TC2 and TCa/TCb arereversed in memory module 253A relative to memory module 253B so that,when a termination control signal is asserted on line TC1, it isreceived via termination control input TCa in memory module 253A and viatermination control input TCb in memory module 253B (as discussed above,a separate pair of termination control lines may be provided for memorymodule instead of a shared pair of polarity-reversed control lines).Similarly, when a termination control signal is asserted on line TC2, itis received via termination control input TCb in memory module 253A andvia termination control input TCa in memory module 253B. As mentioned,multiple buffer ICs may be provided to interface with respective ranksor other groupings of memory ICs within a memory module.

Referring to detail view 256, the controller interface within eachbuffer IC 261 may be implemented by a set of data I/O circuits 157 thatare constructed generally as described above in reference to detail view156 of FIG. 2. That is, each I/O circuit 157 includes a data transceiverstructure 159 (e.g., output driver and signal receiver) and a pair ofswitched termination structures 161 a and 161 b all coupled in parallelto a respective data line of data path 152. Each of the switchedtermination structures 161 a and 161 b includes a respective loadelement (R1, R2) coupled to the data line via a corresponding switchelement (X1, X2). The data transceivers 159 are coupled to a bufferlogic circuit 265 which operates to multiplex (e.g., switchably couple)inbound signals received from the memory controller 251 via transceivers159 to a selected one of the memory ranks 263 ₁-263 _(R) via acorresponding one of memory interfaces 266 ₁-266 _(R), and to multiplexoutbound signals received from one of the memory ranks 263 ₁-263 _(R) tothe data transceivers 159 and thus to the memory controller 251.

As in the embodiment of FIG. 2, the switch elements X1 within each ofthe I/O circuits 157 is coupled in common to termination control inputTCa and the switch elements X2 are coupled in common to terminationcontrol input TCb. By this arrangement, and by virtue of the reversedconnection of the TCa/TCb termination control inputs of memory modules253A and 253B to termination control lines TC1 and TC2, when atermination control signal is asserted on termination control line TC1,load elements R1 are switchably coupled to respective lines of the datapath 152 within memory module 253A, and load elements R2 are switchablycoupled to respective lines of the data path 152 within memory module253B. Similarly, when a termination control signal is asserted ontermination control line TC2, load elements R2 are switchably coupled tothe data path 152 within memory module 253A and load elements R1 areswitchably coupled to the data path 152 within memory module 253B.Accordingly, by programming (or implementing) load elements R1 to have arelatively low impedance (i.e., relatively high load) and load elementsR2 to have a relatively high impedance (i.e., relatively low load), loadelements R1 may be switchably coupled to the data path 152 to effecthard termination and load elements R2 may be switchably coupled to thedata path to effect soft termination. Thus, as shown by the controlleroperation at 272, during a write operation directed to memory module253A (memory module A), a termination control signal may be asserted online TC2 to switchably couple load elements R1 to the data path withinmemory module 253B, and to switchably couple load elements R1 to thedata path within memory module 253A, thus effecting a graduatedtermination within the selected and non-selected memory modules; a softtermination within the selected memory module and a hard terminationwithin the non-selected memory module.

FIG. 5 illustrates another embodiment of a memory system 300 havinggraduated on-die terminations. The memory system 300 includes a memorycontroller 301 coupled to memory modules 303A and 303B via a multi-dropdata path 152, as in the embodiments described above, and also via amulti-drop command/address path 302 (CA) which may also be referred toherein as a request path (note that the command/address path may also beprovided in the embodiments of FIGS. 2, 3 and 4, but is omitted to avoidobscuring other features of those embodiments). In contrast to theembodiments of FIGS. 2, 3 and 4, however, termination control linesTC1/TC2 are omitted (or at least unused) in favor of snoop logiccircuitry within the memory devices 305 of memory modules 303A and 303B.In one embodiment, shown in detail view 306 of a memory device 305, thesnoop logic 315 is included with in the I/O logic and memory corecircuitry 310 and is coupled via signal receiver 311 to receive all or asubset of the signals conveyed on command/address path 302. The snooplogic 315 includes circuitry to determine the nature of a requestedtransaction (e.g., read or write) and to compare a module selector (ormodule address) conveyed on the command/address path 302 with a moduleidentifier value established for the memory module to determine whethera given memory access transaction is directed to the host memory device305 (i.e., the memory device in which the snoop logic 315 resides) or toanother memory device 305 coupled to the same data slice, and togenerate control signals C1 and C2, accordingly (which control signalsare supplied to respective switch elements within data I/O circuits 157implemented as described above in reference to FIG. 2). As shown by thememory operation at 320, if the snoop logic 315 within the memorydevices of memory module 303A detects a memory write transactiondirected to memory module 303A (i.e., write-enable signal asserted(WE=1) and module selector=module identifier for module 303A), the snooplogic will deassert control signal C1 and assert on control signal C2 toswitchably couple load elements R2 (i.e., programmed or implemented by arelatively low-load value to establish a soft termination within theselected module) to the respective lines of data path 152 and switchablydecouple load elements R1 from the data path 152. During the sametransaction, the snoop logic 315 within the memory devices of memorymodule 303B will determine that the memory write transaction is directedto another memory module (i.e., memory module A) and, in response,assert termination control signal C2 and deassert control signal C1 toswitchably couple load elements R1 to the data path 152 and switchablycoupled load elements R2 from the data path 152, thereby establishing ahard termination in the non-selected memory module 303B. When the memorycontroller issues a memory write command directed to memory module 303B,the snoop logic circuits 315 within memory modules 303A and 303B willdetect the reversed roles of the memory modules, with the snoop logic315 within the memory devices 305 of the non-selected memory module 303Aswitchably coupling load elements R1 to the data path 152 to effect hardterminations and the snoop logic 315 within the memory devices 305 ofthe selected memory module 303B switchably coupling load elements R2 tothe data path 152 to effect soft terminations.

Note that a module address may be established for the memory modulethrough configuration register programming, production-time programmingor configuration (e.g., established by a fuse, anti-fuse or othernon-volatile circuit element), pin strapping, etc. Also, with respect tothe signals actually snooped by snoop logic 315 to determine whether thehost memory device is intended to participate in a given transaction,the snoop logic may evaluate one or all bits of an incoming addressfield, chip-select signals and/or any other signals that bear on whetherthe memory device is to respond to the incoming command.

Still referring to FIG. 5, it should be noted that snoop logic circuit315 may be combined with explicit termination control in alternativeembodiments. For example, in one such embodiment, a single terminationcontrol line is provided per memory module. A termination control signalis asserted on the termination control line to indicate that atermination should be enabled, while the snoop logic indicates thegradation of the termination to be applied (e.g., soft termination orhard termination). In another alternative embodiment, a finite statemachine (FSM) may be provided in place of or in combination with snooplogic circuit 315 to determine the termination value. For example, if agiven memory device (or group of memory devices) or buffer IC isexpecting to receive data at the time that a termination control signalis asserted (e.g., based on a command, address value or otherinformation received within the memory device or buffer IC apredetermined amount of time prior to transmission of the data orassertion of the control signal), the FSM may signal such expectationand thus elect to apply an appropriate one of multiple terminationvalues. If a single termination control line is provided per module, andthe termination control line to a given module is activated but no datais expected, the FSM may elect to apply a different (e.g., higher-load)termination value. A memory device or buffer IC may include an internalstate machine for request/command handling purposes (and other controlfunctions), in which case only a relatively small amount of additionallogic should be needed within the state machine to select betweenmultiple graduated terminations. Note that a state machineimplementation may also be combined with snoop logic instead of or inaddition to providing a dedicated termination control line. For example,a FSM within each memory module may determine the termination timing andtermination value to be applied within the module according to whetherthe snoop logic circuit indicates the memory module to be a selected ornon-selected memory module for a given transaction. In all such cases,the combination of state machine, dedicated control line input and/orsnoop logic circuitry may be provided within a buffer IC as generallydescribed in reference to FIG. 4 instead of within memory ICs.

In an embodiment in which a finite state machine or other controlcircuit is used instead of or in combination with snoop logic circuit315 to determine the termination value to be applied during a giventransaction, each individual memory devices within each memory rank mayinclude a finite state machine that indicates the operating state of thememory device at any given time, including whether a write or readoperation is currently being performed within the memory device.Accordingly, each memory device may respond to assertion of atermination control signal on a shared or dedicated termination controlline (i.e., termination control line coupled in common to multiplememory ranks or a dedicated termination control line per memory rank) byeffecting hard termination, soft termination or no-termination accordingto the present device operating state. Alternatively, each memory devicemay include snoop logic circuitry (e.g., generally as described inreference to FIG. 5) in addition to the finite state machine and mayrespond to detection of a transaction indicating need for terminationcontrol (i.e., the snoop logic, in effect, substituting for dedicatedtermination control lines) by effecting hard termination, softtermination or no-termination according to the present operating state.FIG. 6 illustrates an exemplary state diagram 350 of a finite statemachine that may be applied within a memory device in combination withexplicit or implicit termination control detection circuitry (i.e.,circuitry coupled to a shared or dedicated termination control line, orsnoop logic circuitry) to effect a desired one of multiple, graduatedterminations. As shown, the memory devices of a given rank (the statemachines of which may generally be operated in lock step) may initiallybe in an idle operating state 351 in which no rows of the constituentmemory banks are activated. Although not specifically shown, the memorydevices may transition between the idle state (or any of the otherstates shown in FIG. 6) and various low power states, initializationstates, calibration states, configuration states (i.e., for deviceconfiguration operations, including setting of programmable registers),refresh states, etc. that are not specifically shown in FIG. 6. Becauseno read or write operation is occurring within the memory devices whilein the idle state, detection of a termination demand (e.g., detectionassertion of a dedicated or shared termination control signal ordetection of information on a control and/or address path that indicatesa memory read or write transaction) may be inferred to be directed toanother memory rank, so that the idle-state memory devices will effect ahard termination (“Hard T”). When an activate command is received withinthe idle memory rank (i.e., memory rank in which the constituent memorydevices are in idle state 351), the constituent memory devices performrespective row activations at the specified row and bank address (andmay assume one or more intermediate operating states) and thustransition to active state 353. During the transition to the activestate and while in the active state, termination demands may still beinferred to be directed to other memory ranks (i.e., because no read orwrite operations are occurring within the subject memory rank) so thathard termination is applied as shown. When a write command is receivedwithin an activated rank, the constituent memory devices transition to awrite state 355 in which write data is delivered to the write-statememory rank and a soft termination (“Soft T”) is applied to improve thesignaling characteristics over the data path as described above. Notethat other memory ranks may apply hard termination during transfer ofthe write data in accordance with their operating states. After thewrite operation is completed (or multiple successive write operationscompleted), the memory devices of the memory rank may transition to aprecharge state (“Prchg”) 359 (e.g., in an auto-precharge mode) or backto the active state 353. In the precharge state 359, the memory devicesof the memory rank perform operations to close the open bank andprecharge internal signal lines in preparation for a subsequentactivation operation. Accordingly, termination demands detected while inthe precharge state 359 may be inferred to be directed to other memoryranks so that hard termination is applied as shown. Referring again toactive state 353, if a memory read command is received, the memorydevices of the memory rank will transition to a read state 357 in whichread data is output from the memory devices to a memory controller orother device. Accordingly, during the read state, the memory devices maydecouple all termination elements from the data lines on which read datais being driven to avoid undue signal attenuation. As in the write state355, other memory ranks may apply hard termination during transfer ofthe read data in accordance with their operating states.

It should be noted that while embodiments and approaches that include orsupport graduated signal terminations have been described primarily inthe context of memory systems, such embodiments and approaches mayreadily be applied in any signaling system or components thereof inwhich dynamically-selected, graduated terminations may be beneficial.Also, with respect to memory systems, the nature of the core memorystorage elements may vary according to application needs and mayinclude, for example and without limitation, dynamic random accessmemory (dynamic RAM or DRAM) storage elements, static random accessmemory (SRAM) storage elements, non-volatile storage elements such asfloating-gate transistors within an electrically erasable programmableread only memory (EEPROM or Flash EEPROM) or the like. With regard toimplementation of on-die terminations themselves, the load elements maybe implemented by virtually any type of passive components (e.g.,resistors), active components (e.g., transistors or diodes) or anycombination thereof, and the switch elements likewise may be implementedby transistor switches or any other on-die structures that may be usedto connect or disconnect a load element from a given node. Also, whilethe multiple on-die termination elements or circuits have generally beendepicted herein as distinct termination circuits, in all such cases twoor more termination circuits may be implemented by respective loadelements that include shared components. For example, a first loadelement within a first termination circuit may be implemented by a firstset of transistors that are enabled or disabled as a group to effect afirst termination impedance, while a second load element within a secondtermination circuit may include a subset of the first set of transistorsthat are enabled or disabled as a group to effect a differenttermination impedance.

Various aspects of embodiments disclosed herein are set forth, forexample and without limitation, in the following numbered clauses:

-   1. A memory module comprising:    -   a plurality of data inputs to couple to signal lines of an        external data path;    -   first and second termination control inputs to receive first and        second termination control signals, respectively;    -   a buffer integrated circuit (IC) having a first interface        coupled to the plurality of data inputs and to the first and        second control inputs and having a first memory interface that        includes a plurality input/output (I/O) nodes; and    -   a first plurality of memory ICs, each memory IC coupled to a        respective subset of the plurality-   2. The memory module of clause 1 wherein the buffer IC comprises a    plurality of termination circuits coupled respectively to the subset    of the plurality of data inputs, each termination circuit including    a first load element switchably coupled to a corresponding one of    the data inputs and a second load element switchably coupled to the    corresponding one of the data inputs.-   3. The memory module of clause 2 wherein each of the plurality of    termination circuits includes a first switch element to switchably    couple the first load element to or switchably decouple the first    load element from the corresponding one of the data inputs according    to the state of a signal received via the first termination control    input, and a second switch element to switchably couple the second    load element to or switchably decouple the second load from the    corresponding one of the data inputs according to the state of a    signal received via the second termination control input.-   4. The memory module of clause 1 wherein each memory IC of the first    plurality of memory ICs comprises an array of dynamic random access    memory (DRAM) storage elements.-   5. The memory module of clause 1 wherein the buffer IC comprises a    second memory interface, and wherein the memory module comprises a    second plurality of memory ICs coupled to the second memory    interface.

It should also be noted that the various circuits disclosed herein maybe described using computer aided design tools and expressed (orrepresented), as data and/or instructions embodied in variouscomputer-readable media, in terms of their behavioral, registertransfer, logic component, transistor, layout geometries, and/or othercharacteristics. Formats of files and other objects in which suchcircuit expressions may be implemented include, but are not limited to,formats supporting behavioral languages such as C, Verilog, and VHDL,formats supporting register level description languages like RTL, andformats supporting geometry description languages such as GDSII, GDSIII,GDSIV, CIF, MEBES and any other suitable formats and languages.Computer-readable media in which such formatted data and/or instructionsmay be embodied include, but are not limited to, non-volatile storagemedia in various forms (e.g., optical, magnetic or semiconductor storagemedia) and carrier waves that may be used to transfer such formatteddata and/or instructions through wireless, optical, or wired signalingmedia or any combination thereof. Examples of transfers of suchformatted data and/or instructions by carrier waves include, but are notlimited to, transfers (uploads, downloads, e-mail, etc.) over theInternet and/or other computer networks via one or more data transferprotocols (e.g., HTTP, FTP, SMTP, etc.).

When received within a computer system via one or more computer-readablemedia, such data and/or instruction-based expressions of the abovedescribed circuits may be processed by a processing entity (e.g., one ormore processors) within the computer system in conjunction withexecution of one or more other computer programs including, withoutlimitation, net-list generation programs, place and route programs andthe like, to generate a representation or image of a physicalmanifestation of such circuits. Such representation or image maythereafter be used in device fabrication, for example, by enablinggeneration of one or more masks that are used to form various componentsof the circuits in a device fabrication process.

In the foregoing description and in the accompanying drawings, specificterminology and drawing symbols have been set forth to provide athorough understanding of the present invention. In some instances, theterminology and symbols may imply specific details that are not requiredto practice the invention. For example, the interconnection betweencircuit elements or circuit blocks may be shown or described asmulti-conductor or single conductor signal lines. Each of themulti-conductor signal lines may alternatively be single-conductorsignal lines, and each of the single-conductor signal lines mayalternatively be multi-conductor signal lines. Signals and signalingpaths shown or described as being single-ended may also be differential,and vice-versa. Similarly, signals described or depicted as havingactive-high or active-low logic levels may have opposite logic levels inalternative embodiments. As another example, circuits described ordepicted as including metal oxide semiconductor (MOS) transistors mayalternatively be implemented using bipolar technology or any othertechnology in which logical elements may be implemented. With respect toterminology, a signal is said to be “asserted” when the signal is drivento a low or high logic state (or charged to a high logic state ordischarged to a low logic state) to indicate a particular condition.Conversely, a signal is said to be “deasserted” to indicate that thesignal is driven (or charged or discharged) to a state other than theasserted state (including a high or low logic state, or the floatingstate that may occur when the signal driving circuit is transitioned toa high impedance condition, such as an open drain or open collectorcondition). A signal driving circuit is said to “output” a signal to asignal receiving circuit when the signal driving circuit asserts (ordeasserts, if explicitly stated or indicated by context) the signal on asignal line coupled between the signal driving and signal receivingcircuits. A signal line is said to be “activated” when a signal isasserted on the signal line, and “deactivated” when the signal isdeasserted. Additionally, the prefix symbol “I” attached to signal namesindicates that the signal is an active low signal (i.e., the assertedstate is a logic low state). A line over a signal name (e.g., ‘ <signalname>’) is also used to indicate an active low signal. The term“coupled” is used herein to express a direct connection as well as aconnection through one or more intervening circuits or structures.Integrated circuit device “programming” may include, for example andwithout limitation, loading a control value into a register or otherstorage circuit within the device in response to a host instruction andthus controlling an operational aspect of the device, establishing adevice configuration or controlling an operational aspect of the devicethrough a one-time programming operation (e.g., blowing fuses within aconfiguration circuit during device production), and/or connecting oneor more selected pins or other contact structures of the device toreference voltage lines (also referred to as strapping) to establish aparticular device configuration or operation aspect of the device. Theterm “exemplary” is used to express an example, not a preference orrequirement.

While the invention has been described with reference to specificembodiments thereof, it will be evident that various modifications andchanges may be made thereto without departing from the broader spiritand scope of the invention. For example, features or aspects of any ofthe embodiments may be applied, at least where practicable, incombination with any other of the embodiments or in place of counterpartfeatures or aspects thereof. Accordingly, the specification and drawingsare to be regarded in an illustrative rather than a restrictive sense.

What is claimed is:
 1. A non-volatile memory device comprising: asignaling interface to receive, at respective times, data storagecommands and data read commands, the signaling interface including atleast one input/output (I/O) node to be coupled to a bidirectionalsignaling line; and control circuitry to apply a first terminationresistance to the I/O node in response to a first data storage commandindicating that a data signal conveyed on the bidirectional signalingline is to be received within the non-volatile memory device via the I/Onode, and to apply a second termination resistance to the I/O node inresponse to information indicating that another memory device is tooutput a data signal onto the bidirectional signaling line.
 2. Thenon-volatile memory device of claim 1 wherein the information indicatingthat another memory device is to output a data signal comprises, atleast in part, an address value received via the signaling interface anddetermined not to match an address of the non-volatile memory device. 3.The non-volatile memory device of claim 2 wherein the address valuereceived via the signaling interface comprises an address value receivedin association with a data read command.
 4. The non-volatile memorydevice of claim 1 wherein the first data storage command is received atleast in part via the I/O node and wherein the information indicatingthat another memory device is to output a data signal is received atleast in part via the I/O node.
 5. The non-volatile memory device ofclaim 1 wherein the control circuitry decouples at least a portion ofthe first termination resistance and at least a portion of the secondtermination resistance from the I/O node while outputting a data signalonto the bidirectional signaling line in response to a data read commanddirected to the non-volatile memory device.
 6. The non-volatile memorydevice of claim 1 wherein the signaling interface comprises an outputdriver to output a data signal onto the bidirectional signaling line viathe I/O node in response to a read command that is (i) received via thesignaling interface and (ii) directed to the non-volatile memory device,the control circuitry to apply no termination resistance to the I/O nodeduring an interval in which the output driver is outputting the datasignal onto the bidirectional signaling line.
 7. The non-volatile memorydevice of claim 1 wherein the control circuitry to apply the secondtermination resistance to the I/O node in response to the informationindicating that the other memory device is to output a data signal ontothe bidirectional signaling line comprises circuitry to determinewhether a chip-select signal is asserted or deasserted.
 8. Thenon-volatile memory device of claim 1 further comprising a programmableregister to store first and second control values that controlresistance values of the first and second termination resistances,respectively.
 9. The non-volatile memory device of claim 1 wherein thesignaling interface to receive data storage commands receives a writeenable signal indicative of a data storage operation.
 10. A method ofoperation within a non-volatile memory device, the method comprising:receiving via a signaling interface, at respective times, data storagecommands and data read commands, the signaling interface including atleast one input/output (I/O) node coupled to a bidirectional signalingline; applying a first termination resistance to the I/O node inresponse to a first data storage command indicating that a data signalconveyed on the bidirectional signaling line is to be received withinthe non-volatile memory device via the I/O node; and applying a secondtermination resistance to the I/O node in response to informationindicating that another memory device is to output a data signal ontothe bidirectional signaling line.
 11. The method of claim 10 wherein theinformation indicating that another memory device is to output a datasignal comprises, at least in part, an address value received via thesignaling interface and determined not to match an address of thenon-volatile memory device.
 12. The method of claim 11 wherein theaddress value received via the signaling interface comprises an addressvalue received in association with a data read command.
 13. The methodof claim 10 wherein the first data storage command indicating isreceived at least in part via the I/O node and the informationindicating that another memory device is to output a data signal isreceived at least in part via the I/O node.
 14. The method of claim 10further comprising decoupling at least a portion of the firsttermination resistance and at least a portion of the second terminationresistance from the I/O node while outputting a data signal onto thebidirectional signaling line in response to a data read command directedto the non-volatile memory device.
 15. The method of claim 10 furthercomprising: outputting a data signal onto the bidirectional signalingline via the I/O node in response to a read command that is (i) receivedvia the signaling interface and (ii) directed to the non-volatile memorydevice; and applying no termination resistance to the I/O node whileoutputting the data signal onto the bidirectional signaling line. 16.The method of claim 10 wherein applying the second terminationresistance to the I/O node in response to information indicating thatthe other memory device is to output a data signal onto thebidirectional signaling line comprises determining whether a chip-selectsignal is asserted or deasserted.
 17. The method of claim 10 furthercomprising storing first and second control values within a programmableregister to control resistance values of the first and secondtermination resistances, respectively.
 18. The method of claim 10wherein receiving data storage commands via the signaling interfacecomprises receiving a write enable signal indicative of a data storageoperation.
 19. A non-transitory machine-readable medium that stores datarepresentative of a non-volatile memory device comprising: a signalinginterface to receive, at respective times, data storage commands anddata read commands, the signaling interface including at least oneinput/output (I/O) node to be coupled to a bidirectional signaling line;and control circuitry to apply a first termination resistance to the I/Onode in response to a data storage command indicating that a data signalconveyed on the bidirectional signaling line is to be received withinthe non-volatile memory device via the I/O node, and to apply a secondtermination resistance to the I/O node in response to informationindicating that another memory device is to output a data signal ontothe bidirectional signaling line.
 20. A non-volatile memory devicecomprising: a signaling interface to receive, at respective times, datastorage commands and data read commands, the signaling interfaceincluding at least one input/output (I/O) node to be coupled to abidirectional signaling line; and means for applying a first terminationresistance to the I/O node in response to a data storage commandindicating that a data signal conveyed on the bidirectional signalingline is to be received within the non-volatile memory device via the I/Onode, and for applying a second termination resistance to the I/O nodein response to information indicating that another memory device is tooutput a data signal onto the bidirectional signaling line.